| DCB材料的无损检测技术研究 |
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| 引用本文： | 张晓辉,钟力生.DCB材料的无损检测技术研究[J].西安交通大学学报,1997,31(11):55-59. |
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| 作者姓名： | 张晓辉 钟力生 |
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| 作者单位： | 西安交通大学 |
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| 基金项目： | 上海交通大学金属基复合材料国家重点实验室开放课题资助 |
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| 摘 要： | ＤＣＢ材料的键合有效面积是影响ＤＣＢ材料质量的关键因素。根据ＤＣＢ材料的特点，将局部放电和介质电容测量技术相结合，应用于检测ＤＣＢ材料键合质量，并从理论上进行了较为系统的研究，获得了较理想的结果，从而发展了一种对ＤＣＢ材料键合质量进行无损检测的、方便实用的新方法。
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| 关 键 词： | 电力半导体器件 DCB材料 无损检测 电工陶瓷材料 |
Study on the Nondestructive Detection Method for the Interface Properties of DCB Materials |
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| Zhang,Xiaohui,Zhong,Lisheng,Xu,Chuanxiang.Study on the Nondestructive Detection Method for the Interface Properties of DCB Materials[J].Journal of Xi'an Jiaotong University,1997,31(11):55-59. |
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| Authors: | Zhang Xiaohui Zhong Lisheng Xu Chuanxiang |
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| Abstract: | The effective bonding area of DCB materials is the key factor to affect its quality. In this paper, the partial discharge measurement with the capacitance ineasuring technique is used to measure the bonding quality according to characteristics of DCB materials. Systema tic research is done in theory and promising results are obtained. And a new convenient practical method to measure the bonding quality of DCB materials is proposed |
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| Keywords: | electrical power semiconductor device bonding ceramic detection |
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