| InP单晶的阳极氧化,界面参数和浓度分布的研究 |
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| 引用本文： | 丁永庆,彭瑞伍,汪光裕.InP单晶的阳极氧化,界面参数和浓度分布的研究[J].应用科学学报,1984,2(1):75-80. |
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| 作者姓名： | 丁永庆 彭瑞伍 汪光裕 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 本文首次测量了用阳极氧化方法制得的N型InPMIS二极管的I-V和C-V特性.从I-V特性曲线计算出二极管的理想因子n值为1.4,势垒高空>0.75eV.用汞探针和阳极氧化逐层剥离的方法测得了N型InP气相外延载流子浓度的纵向分布.此法制得的金势垒MIS结构可能对开展InP深能级工作有所帮助.
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| 收稿时间： | 1982-01-30 |
THE STUDY OF ANODIC OXIDATION,MIS CHARACTERISTICS AND CARRIER CONCENTRATION PROFILE OF INP |
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| DING YONGQING,PENG RUIWU,WANG GUANGYUAN.THE STUDY OF ANODIC OXIDATION,MIS CHARACTERISTICS AND CARRIER CONCENTRATION PROFILE OF INP[J].Journal of Applied Sciences,1984,2(1):75-80. |
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| Authors: | DING YONGQING PENG RUIWU WANG GUANGYUAN |
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| Institution: | Shanghai Institute of Metallurgy Academy of Sciences of China |
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| Abstract: | The I-V and C-V characteristic of N-type InP MIS Schottky diode prepared by the anodic oxidation are studied for the first time. From the I-V characteristic curve the ideal factor (n) of 1.4 and the barrier height of more than 0.75 eV are obtained. The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching. This MIS structure could be helpful in the studies of deep levels in InP materials. |
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