| 二氧化硅簿膜驻极体的电荷动态特性 |
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| 引用本文： | 夏钟福,吕美安,ＰＧｕｅｎｔｈｅｒ,施林生.二氧化硅簿膜驻极体的电荷动态特性[J].应用科学学报,1995(1). |
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| 作者姓名： | 夏钟福 吕美安 ＰＧｕｅｎｔｈｅｒ 施林生 |
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| 作者单位： | 同济大学玻尔固体物理研究所，德国塔姆斯达特技术大学 |
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| 基金项目： | 国家自然科学基金, 中德合作课题 |
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| 摘 要： | 系统地研究了二氧化硅薄膜驻极体的负表面电荷和正表面与体电荷受激脱阱后在体内的输运规律。并考察了这种驻极体的放电特性，化学表面处理对该驻极体的电荷稳定性及电荷层在体内的迁移规律的影响。充电后的适当老化程序，可使电荷重心从样品的自由面附近向体内迁移，由此导致的二氧化硅的体内负电荷具有极好的稳定性。这一结果对正在研制中的二氧化硅微型传感器的质量改善是十分重要的。
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| 关 键 词： | 二氧化硅，驻极体，老化，电荷输运，化学表面处理。 |
CHARGE DYNAMICS OF SILICON DIOXIDE ELECTRETS |
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| XIA ZHONGFU LU METAN.CHARGE DYNAMICS OF SILICON DIOXIDE ELECTRETS[J].Journal of Applied Sciences,1995(1). |
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| Authors: | XIA ZHONGFU LU METAN |
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| Abstract: | In this paper,the transport rule of detrapped charges(either negative surfacecharges or positive surface and bulk charges)in the bulk of the silicon dioxidefilm electrets was systematically studied. The discharge behavior of silicon dioxideeIectret,the influence of chemical surface treatment on charge stability and theshift of charge layer in the bulk for SiO_2 were investigated. The mean chargedepth can be shifted from the near free surface into the bulk of SiO_2 by control-ling the ageing temperature. The negative charges in the bulk of silicon dioxidehave excellent stability,which is a very lmportant result for the study being doneabout the improvement of quality for SiO_2 micro-sensors. |
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