| E_u~+注入单晶硅经快速热退火后的喇曼光谱研究 |
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| 引用本文： | 刘峰奇,石万金.E_u~+注入单晶硅经快速热退火后的喇曼光谱研究[J].河南师范大学学报(自然科学版),1991,19(4):59-62. |
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| 作者姓名： | 刘峰奇 石万金 |
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| 作者单位： | 河南师范大学物理系，中国科学技术大学北京研究生院 |
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| 摘 要： | 喇曼光谱及扫描镜徽区形貌象说明,E_u~+注入(注入能量350Kev,注入剂量2×10~(15) cm~(-2) )n 型单晶硅后,在表面可形成一连续非晶层.经过895℃快速热退火(RTA)可以消除注入损伤,Si 损伤区恢复完整;当快速退火温度为1285℃时,在硅表面存在 E_u 的表面偏析及表面增强喇曼散射(SERS)现象,我们对增强机理进行了讨论.
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| 关 键 词： | 离子注入 快速热退火(RTA) 表面增强喇曼散射(SERS) SEM |
RAMAN SPECTROSCOPY STUDY OF E_u~+IMPLANTED Si AFTER RAPID THERMAL ANNEALING |
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| Liu Fengqi.RAMAN SPECTROSCOPY STUDY OF E_u~+IMPLANTED Si AFTER RAPID THERMAL ANNEALING[J].Journal of Henan Normal University(Natural Science),1991,19(4):59-62. |
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| Authors: | Liu Fengqi |
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| Abstract: | Raman Spectroscopy and Scanning Electron Microscopy images show that an amorphous layer is
formed after an E(?)~+(350 Kev,2×10~(15) cm~(-2) )implanting into n-type crystalline silicon.Rapid thermal an-nealing(RTA)at 895℃ can remove implant damage and the damage Si region recovers completely.If the RTA temperature is 1285℃,segregation of the implanted Eu and surface enhanced Raman
scattering(SERS)are abserved.The mechanisms of enhancement are also discussed. |
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| Keywords: | ion implantion RTA SERS SEM |
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