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单轴应力下应变量子阱结构的共振隧穿特性
引用本文:吴晶莹,许丽萍.单轴应力下应变量子阱结构的共振隧穿特性[J].太原师范学院学报(自然科学版),2007,6(1):58-60.
作者姓名:吴晶莹  许丽萍
作者单位:中北大学理学院,物理系,山西,太原,030051
摘    要:研究了应变对量子阱结构的遂穿电流的影响,考虑应变对介电常数、有效质量,晶格常量等物理量的影响,由变分法计算了AIGaAs/GaAS应变量子阱的隧穿系数随外加应变变化.计算结果表明,应变对量子阱结构的隧穿系数有着极为重要的影响,根据这些变化,可以选取检测的敏感点.

关 键 词:量子阱结构  介电常数  有效质量  隧穿系数
文章编号:1672-2027(2007)01-0058-03
收稿时间:2007-01-26
修稿时间:2007年1月26日

The Properties of Resonant Tunneling Under Single Axis Pressure of Quantum-well Structures
Wu Jingying,Xu Liping.The Properties of Resonant Tunneling Under Single Axis Pressure of Quantum-well Structures[J].Journal of Taiyuan Normal University:Natural Science Edition,2007,6(1):58-60.
Authors:Wu Jingying  Xu Liping
Abstract:The effects of strain on the transmission coefficient were studied for quantumwell structures. The transmission coefficient of GaAlAs/GaAs quantum-well structures under pressure are calculated using the variation method with consideration of the influence of pressure or strain on the dielectric constant ,effective mass ,lattice constants and other physical quantities. The results show that for the transmission coefficient of quantum-well structures,the strain effects are important. According to these variation, we can select sensitive point to check and mesaure.
Keywords:quantum-well structures  dielectric constant  effective mass  transmission coefficient
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