p—GaP／Au—Sb／Au—Zn体系的接触界面

采用X光电子能谱(XPS)研究了Au-Zn/Au-Sb与p-GaP接触体系的界面结构及其组分随着A_r~ 溅射刻蚀深度的变化,实验结果表明,在一定的合金温度下由于GaP和Au-Zn/Au-Sb层之间金属-半导体互扩散生成Au-Ga反应层,GaSb化合物并含有Zn的原子,Zn内扩散使界面形成一个较高掺杂浓度的再生长层,可改善M-S欧姆接触性质,此外,界面上还有碳、氧杂质的沾污,有效地清除半导体表面氧化层对于制好欧姆电极是重要的。

Contact Interface in p-GaP/Au-Sb/Au-Zn System

The changes of interface microstructure and constituent with increasing Ar sputtering depth in Au-Zn/Au-Sb and p-GaP contact system have been investigated by X-ray Photo-emission Spectroscopy. The experi-mental results show that at certain alloying temparature AuGa reaction laye and Ga Sbcompound have been formed on the metal-semiconductor contactr interfaces. During alloying, Zn atoms diffuse into the GaP surfaces, resulting in higher concentration of acceptor impurity, which improves the Au-Zn/Au-Sb and p-GaP ohmic contact property. In addition, the contact interface was contaminated by C,O impurities. It is important for forming good ohmic contact electrode that the oxidized layer on the semiconductor surface must be effectively removed.