| InxGa1-xN/GaN应变量子点中激子的结合能 |
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| 引用本文： | 郑冬梅,黄凤珍. InxGa1-xN/GaN应变量子点中激子的结合能[J]. 淮北煤炭师范学院学报(自然科学版), 2005, 26(4): 21-25 |
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| 作者姓名： | 郑冬梅 黄凤珍 |
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| 作者单位： | 1. 三明学院应用物理系,福建,三明,365004
2. 河南师范大学物理系,河南,新乡,453007 |
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| 摘 要： | 利用有效质量方法和变分原理，考虑内建电场效应和量子点的三维约束效应，研究了InxGa1-xN／GaN应变量子点中的激子结合能随量子点结构参数和量子点中In含量x的变化规律．结果表明，随着量子点高度L和半径R的增加，结合能降低，随着量子点中In含量的增加，激子的结合能增大．对给定体积的量子点，激子结合能存在一最大值，此时电子、空穴被最有效的约束在量子点内．对不同体积的量子点，最大值的位置在量子点高度L=1．7nm附近取得.
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| 关 键 词： | InxGa1-xN／GaN 量子点 激子结合能 |
| 文章编号： | 1672-7177（2005）04-0021-05 |
| 收稿时间： | 2005-06-27 |
| 修稿时间： | 2005-06-27 |
The Binding Energy of Exciton Confined in InxGa1 - xN/GaN Strained Quantum Dots |
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| ZHENG Dong-mei,HUANG Feng-zhen. The Binding Energy of Exciton Confined in InxGa1 - xN/GaN Strained Quantum Dots[J]. Journal of Huaibei Coal Industry Teachers College(Natural Science edition), 2005, 26(4): 21-25 |
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| Authors: | ZHENG Dong-mei HUANG Feng-zhen |
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| Affiliation: | 1. Department of Applied Physics, Sanming College, 365004, Sanming, Fujian, China; 2. Department of Physics, Henan Normal University, 453007, Xinxiang, Henan, China |
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| Abstract: | Within the framework of effective-mass approximation,we investigate the binding energy of exciton confined in InxGa1-xN/GaN strained quantum dots by means of variational approach.The numerical results show that:(1)When the height and the radius of QDs are increased the binding energy is reduced,and when In content is increased the binding energy is also increased;(2) The exciton binding energy is sensitive to the shap of the QD for a definite volume.There is a maximum in the binding energy,where the electrons and holes are the most efficiently confined in the QDs.The maxima are obtained at L=1.7 nm for the QDs with the different volume. |
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| Keywords: | InxGa1- xN/GaN quantum dots exciton binding energy |
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