| Si／SiO2系统辐照损伤的氢,氧等离子体低温退火研究 |
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| 引用本文： | 张旗,方玉田.Si／SiO2系统辐照损伤的氢,氧等离子体低温退火研究[J].兰州大学学报(自然科学版),1993,29(3):78-82. |
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| 作者姓名： | 张旗 方玉田 |
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| 作者单位： | 兰州大学物理学系，兰州大学物理学系，张掖师专物理学系 兰州 730000，兰州 730000，734000 |
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| 摘 要： |
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| 关 键 词： | 等离子退火 辐照损伤 硅 二氧化硅 |
Annealing Effect of RF H_2 and O_2 Plasma upon the Radiation Damage Si/SiO_2 System |
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| Zhang Qi Li Siyuan.Annealing Effect of RF H_2 and O_2 Plasma upon the Radiation Damage Si/SiO_2 System[J].Journal of Lanzhou University(Natural Science),1993,29(3):78-82. |
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| Authors: | Zhang Qi Li Siyuan |
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| Abstract: | H_2, O_2 RF(radio frepuency) plasma annealing as a function of pressure, tempera-ture, and time is studied in detail when the Si/SiO_2 system is radiated by O_2 plasma.The results show that RF H_2 and O_2 plasma annealings can effectively remove radiateddemage, and that the fixed charges N and interface states N_s are Closely associated withthe placed pattern of the wafer and the annealing ambients, respectively. |
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| Keywords: | interface defects plasma annealing intarface states Si/SiO_2 system radiated damage |
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