| 固态源激光化学掺杂 |
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| 引用本文： | 王英民,彭英才,李保通.固态源激光化学掺杂[J].河北大学学报(自然科学版),1986(4). |
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| 作者姓名： | 王英民 彭英才 李保通 |
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| 作者单位： | 河北大学电子系
(王英民，彭英才)，河北大学电子系(李保通) |
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| 摘 要： | 本工作采用掺硼多晶硅薄膜作为固态源,用CW—CO_2激光器进行辐照,使多晶硅中的硼原子向样品中进行扩散,以形成p-n结。对扩散层的杂质剖面及p—n结的击穿特性作了测量分析,获得了令人满意的实验结果。
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Laser Assistant Doping by Using Solid State Source |
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| Abstract: | In this work, cw-co2 Laser is used for photochemical B-doping in si with solid state source. The measurements of impurity distribution profile of the diffused Layer and breakdown charactrestic of the p-n janction shows that, shallower junction and steeper gradient of impurity is obtained in the presence of Laser irradiation than in ordinary thermodiffusion. |
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