| 变温霍尔效应测量n型锗半导体薄膜禁带宽度 |
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| 引用本文： | 符斯列,王春安,陈俊芳.变温霍尔效应测量n型锗半导体薄膜禁带宽度[J].实验科学与技术,2010,8(2):15-17. |
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| 作者姓名： | 符斯列 王春安 陈俊芳 |
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| 作者单位： | 1. 华南师范大学物理与电信工程学院,广州,510006
2. 广东技术师范学院电子与信息学院,广州,510665 |
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| 摘 要： | 文章介绍了变温霍尔效应测量半导体电学特性实验，通过77—400K的浅掺杂n型锗标准样品变温霍尔效应测量，根据对各种变温数据曲线中高温本征导电区斜率的计算，得到半导体样品的禁带宽度Eg，并对计算结果进行比较讨论。认为1g（｜RH｜T^3/2）-1／T曲线方法更合适用来计算禁带宽度。
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| 关 键 词： | 变温霍尔效应 n型标准锗样品 禁带宽度 |
Measurement of Bandgap of n-Ge Semiconductor by Temperature-Dependent Hall Experiment |
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| FU Si-lie,WANG Chun-an,CHEN Jun-fang.Measurement of Bandgap of n-Ge Semiconductor by Temperature-Dependent Hall Experiment[J].Experiment Science & Technology,2010,8(2):15-17. |
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| Authors: | FU Si-lie WANG Chun-an CHEN Jun-fang |
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| Institution: | FU Si-lie1,WANG Chun-an2,CHEN Jun-fang1(1.School of Physics , Communication Engineering,South China Normal University,Guangzhou 510006,China,2.School of Electronic , Information,Guangdong Polytechnic Normal University,Guangzhou 510665,China) |
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| Abstract: | This paper describes the variable-temperature Hall effect measurement of electrical properties of semiconductor. As an example, a shallow doped n-type Ge standard sample was measured in a range of77K -4001C By means of calculating the intrinsic conduction zone temperature slope for various variable-temperature data curves, one can obtain the bandgap Eg of semiconductor. The analysis from the data curves depending on temperature indicates that the bandgap calculated from lg（ ｜ RH ｜ T^3/2 ） - 1/T curve is more suitable for calculating the bandgap. |
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| Keywords: | temperature-dependent hall effect n-type Ge standard sample bandgap |
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