| A Direct Parameter-Extraction Method for GalnP／GaAs Heterojunction Bipolar Transistors Small-Signal Model |
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| 作者姓名： | SHI Xin-zhi LIU Hai-wen SUN Xiao-wei CHE Yan-feng CHENG Zhi-qun LI Zheng-fan . The State Key Laboratory of Software Engineering Wuhan University Wuhan Hubei China . |
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| 作者单位： | SHI Xin-zhi 1，LIU Hai-wen 2，3，SUN Xiao-wei 2，CHE Yan-feng 2，CHENG Zhi-qun 2，LI Zheng-fan 3 1. The State Key Laboratory of Software Engineering，Wuhan University，Wuhan 430072，Hubei，China; 2. Department of Electronic Engineering，Shanghai Jiaotong University，Shanghai 200030，China; 3. Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China |
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| 基金项目： | Supported by the National Natural Science Foun dation of China(60444004) and the AM Foundation of Shanghai Mu nicipal Science and Technology Commission of China (0109) |
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| 摘 要： | Heterojunction bipolar transistors(HBT) have been wide ly used for digital, analog, and power applications dueto their superior high speed and high current driving capabili ties. The development of HBT on the materials of GaAs andSi/SiGe has been stimulat…
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| 关 键 词： | 异质结 双极晶体管 信号模式 HBT 频率 半导体 |
| 收稿时间： | 6 May 2004 |
A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model |
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| SHI Xin-zhi ,LIU Hai-wen ,,SUN Xiao-wei ,CHE Yan-feng ,CHENG Zhi-qun ,LI Zheng-fan . The State Key Laboratory of Software Engineering,Wuhan University,Wuhan ,Hubei,China, ..A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model[J].Wuhan University Journal of Natural Sciences,2005,10(2):405-409. |
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| Authors: | Shi Xin-zhi Liu Hai-wen Sun Xiao-wei Che Yan-feng Cheng Zhi-qun Li Zheng-fan |
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| Institution: | (1) The State Key Laboratory of Software Engineering, Wuhan University, 430072 Wuhan, Hubei, China;(2) Department of Electronic Engineering, Shanghai Jiaotong University, 20030 Shanghai, China;(3) Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China |
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| Abstract: | An accurate and broad\|band method for heterojunction bipolar transistors (HBT) small\|signal model parameters\|extraction is presented in this paper. An equivalent circuit for the HBT under a forward\|bias condition is proposed for extraction of access resistance and parasitic inductance. This method differs from previous ones by extracting the equivalent circuit parameters without using special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S \|parameters in the frequency range of 1\|12 GHz under different bias conditions. The method yields a deviation of less than 5% between measured and modeled S \|parameters. |
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| Keywords: | GaInP/GaAs HBT parameter extraction small\|signal model |
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