| 含磁性非磁性金属插入层磁隧道结的隧穿特性研究 |
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| 引用本文： | 王文梁,李玲,谢征微.含磁性非磁性金属插入层磁隧道结的隧穿特性研究[J].四川师范大学学报(自然科学版),2005,28(2):198-201. |
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| 作者姓名： | 王文梁 李玲 谢征微 |
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| 作者单位： | 四川师范大学,物理系,四川,成都,610066 |
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| 基金项目： | 教育部科学研究重点资助项目 |
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| 摘 要： | 讨论了一种新型FM1/NM/FM/I/FM2磁性隧道结,该隧道结结构可获得高质量的I层,从而具有重要的应用价值.利用Slonezewski的自由电子模型和转移矩阵方法,对这种隧道结中的隧穿电导(TC)和隧穿磁电阻(TMR)与NM、FM层的厚度以及和势垒高度的关系进行了研究.同时还通过和FM1/NM/I/FM2型隧道结的相应结果的比较讨论了FM层在FM1/NM/FM/I/FM2磁性隧道结中的作用.
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| 关 键 词： | 磁性隧道结 隧穿电导 隧穿磁电阻 |
| 文章编号： | 1001-8395(2005)02-0198-04 |
| 修稿时间： | 2004年4月8日 |
Study on Tunneling Characters of Magnetic Tunneling Junctions in Magnetic and Nonmagnetic Inserted Layers |
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| WANG Wen-liang,LI Ling,XIE Zheng-wei.Study on Tunneling Characters of Magnetic Tunneling Junctions in Magnetic and Nonmagnetic Inserted Layers[J].Journal of Sichuan Normal University(Natural Science),2005,28(2):198-201. |
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| Authors: | WANG Wen-liang LI Ling XIE Zheng-wei |
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| Abstract: | In this paper, a new kind of magnetic tunneling junction FM1/NM/FM/I/FM is discussed theoretically. This structure ensures the high quality of the insulator layer, so it has important practical application. Based on the Slonezewski's free electron model and transferred matrix method, the relation between tunneling conductance(TC), tunneling magnetic resistance(TMR) and the thickness of NM, FM and the height of the barrier are discussed. In addition, the further discussions about the effects of the FM layer on the magnetic junctions FM1/NM/FM/I/FM2 are presented by comparing with the results of the magnetic junctions FM1/NM/I/FM2. |
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| Keywords: | Magnetic tunnel junctions Tunneling electric conductance Tunneling magnetic resistance |
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