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半导体量子结构和Si基光电子材料设计的新进展
引用本文:黄美纯. 半导体量子结构和Si基光电子材料设计的新进展[J]. 厦门大学学报(自然科学版), 2001, 40(2): 242-250
作者姓名:黄美纯
作者单位:厦门大学物理学系,
基金项目:国家自然科学基金资助项目(重大项目69896260和信息部项目60077029)
摘    要:
评述近年来在半导体量子结构电子态理论应用于Si基光电子材料设计方面的重要进展。着重对有直接高技术应用背景的论题进行讨论和展望。最近关于Si纳米晶光增益和纳米硅/氧超晶格材料超稳定电致发光等具有突破性发现的实验研究成果具有重要意义。对本课题组在该领域的主要贡献及最近关于Si/O超晶格结构的理论研究进展也作简要报道。这些研究正酝酿着信息领域光电子集成技术的重大突破。

关 键 词:半导体量子结构 硅基光电子材料 纳米硅/氧超晶格 硅纳米晶 电子态理论 设计
文章编号:0438-0479(2001) 02-0242-09
修稿时间:2001-02-15

Recent Development inSemiconductor Quantum Structures and Design of Si-Based Optoelectronic Materials
HUANG Mei-chun. Recent Development inSemiconductor Quantum Structures and Design of Si-Based Optoelectronic Materials[J]. Journal of Xiamen University(Natural Science), 2001, 40(2): 242-250
Authors:HUANG Mei-chun
Abstract:
The important developments in electronic structure theory of semiconductor quantum structure and its application for designing Si based optoelectronic materials are reviewed. The discussions emphasis on the topics with high tech background. The findings in very recent about optical gain in silicon nanocrystals and ultra stable visible electroluminescence from crystalline Si/O superlattice are the outstanding achievements in this field. The main contributions and some of newly studies in our research group in this field are also briefly reported. The experimental and theoretical studies on this subject are brewing a great break through in the integrated optoelectronic technology.
Keywords:semiconductor quantum structure  Si based optoelectronic materials  Si nanocrystals  nanosilicon/O superlattices
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