| 用XPS测量ZnS0.8Te0.2／GaP半导体异质结的价带偏移 |
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| 引用本文： | 孙汪典.用XPS测量ZnS0.8Te0.2／GaP半导体异质结的价带偏移[J].暨南大学学报,1999,20(3):28-32. |
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| 作者姓名： | 孙汪典 |
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| 作者单位： | 暨南大学物理系!广东广州５１０６３２ |
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| 摘 要： | 应用Ｘ射线光电子能谱(ＸＰＳ）对分子束外延生长的ＺｎＳ(０．８)Ｔｅ(０．２)／ＧａＰ半导体异质结进行直接法测量，得其价带偏移值为１．５ｅＶ；采用芯态能级技术法测量，得其价带偏移值为１．４５ｅＶ在测量误差范围内，两种方法测得的结果相一致．
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| 关 键 词： | 半导体异质结 价带偏移 X射线光电子能谱 |
Measurement of the valence band offset in semiconductor heterojunction ZnS_(0.8)Te_(0.2)/GaP by XPS |
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| SUN Wang - dian.Measurement of the valence band offset in semiconductor heterojunction ZnS_(0.8)Te_(0.2)/GaP by XPS[J].Journal of Jinan University(Natural Science & Medicine Edition),1999,20(3):28-32. |
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| Authors: | SUN Wang - dian |
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| Abstract: | The are is applied to measure the valence band offset in situ for semiconductor heterojunction ZnS0.8Te0.2/GaP grown by molecular beam epitaxy. The direct measurement yields the valence bandoffset value is 1 .5 eV and by core level measurement it will be 1.45 eV. The results by two differentmethods are consistent within the experimental error area. |
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| Keywords: | : semiconductor heterojunction valence band offset X- ray photoelectron spectroscopy(XPS) |
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