| 低功耗高速擦写Flash Memory的研究 |
| |
| 引用本文： | 吕家云,蒋全胜.低功耗高速擦写Flash Memory的研究[J].合肥工业大学学报(自然科学版),2006,29(5):634-636. |
| |
| 作者姓名： | 吕家云 蒋全胜 |
| |
| 作者单位： | 巢湖学院,物理系,安徽,巢湖,238000 |
| |
| 基金项目： | 安徽省教育厅自然科学基金 |
| |
| 摘 要： | 随着嵌入式系统和移动通信的发展及集成电路特征尺寸的减小,对低功耗和更快的擦写速度提出了新的要求。文章从传统Flash Memory的结构缺陷上分析,为降低功耗及提高擦写速度方面提出了改进方法,并介绍了Flash Memory技术的发展趋势。
|
| 关 键 词： | FlashMemory 低功耗 电子注入 |
| 文章编号： | 1003-5060(2006)05-0634-03 |
| 修稿时间： | 2005年8月4日 |
Study on low-power high-speed erasing/programming flash memory |
| |
| L Jia-yun,JIANG Quan-sheng.Study on low-power high-speed erasing/programming flash memory[J].Journal of Hefei University of Technology(Natural Science),2006,29(5):634-636. |
| |
| Authors: | L Jia-yun JIANG Quan-sheng |
| |
| Institution: | L(U) Jia-yun,JIANG Quan-sheng |
| |
| Abstract: | The flash memory is popularized for its non-volatility and electrically programmable and erasable property,but the development of embedded systems and mobile communication and the reduction of the characteristic size of integrated circuits bring about new requirements in its performance such as lower power-consumption,higher speed of erasing and writing.The structural defect of the traditional flash memory is analyzed.Some methods for reducing power-consumption and improving the speed of erasing and writing are proposed.The development trend of the flash memory's technology is also discussed. |
| |
| Keywords: | flash memory low power-consumption electron injection |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
