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稀土掺杂ZnO半导体气敏传感器的性能研究
引用本文:王晓平.稀土掺杂ZnO半导体气敏传感器的性能研究[J].湘潭大学自然科学学报,1999,21(4):109-111.
作者姓名:王晓平
作者单位:长沙交通学院基础部,长沙,410076
摘    要:介绍了一种稀土(Tb2O3) 掺杂ZnO气敏传感器的制作工艺和传感器的性能.其特点是选择性好,工作温度比无稀土掺杂的ZnO 气敏传感器的工作温度低

关 键 词:稀土元素  气敏传感器  性能
修稿时间:1998年10月15

Study of the Properties of Rare- Earth Doped ZnO in Semiconductor Gas Sensor
Wang Xiaoping.Study of the Properties of Rare- Earth Doped ZnO in Semiconductor Gas Sensor[J].Natural Science Journal of Xiangtan University,1999,21(4):109-111.
Authors:Wang Xiaoping
Abstract:In this paper,we introduce a gas senser mechanic technology of rare earth doped material, including its function.Its feature is good in selection and its working temperature is lower than that of the gas sensor without rareearth material.This new discovery may creat a new thought in the application of rareearth element to sensor.
Keywords:rareearth element  gas sensor  properties  
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