| 斜切ATGSP晶体的电压响应优值 |
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| 引用本文： | 王民,房昌水.斜切ATGSP晶体的电压响应优值[J].山东大学学报(理学版),1988(2). |
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| 作者姓名： | 王民 房昌水 |
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| 作者单位： | 山东大学晶体材料研究所，山东大学晶体材料研究所 |
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| 摘 要： | 本文报导了 ATGSP 晶体的三个主介电常数和热释电系数的测量结果;计算了不同斜切角度下的电压响应优值 M;研究了 M 值随温度的变化规律。实验结果表明,采用斜切方式的 ATGSP 晶体热释电探测器件可以提高电压响应优值。
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| 关 键 词： | 热释电晶体材料 电压响应优值 |
VOLTAGE RESPONSE FIGURE OF MERIT IN OBLIQUELY-CUT ATGSP CRYSTALS |
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| Wang Min Fang Changshui.VOLTAGE RESPONSE FIGURE OF MERIT IN OBLIQUELY-CUT ATGSP CRYSTALS[J].Journal of Shandong University,1988(2). |
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| Authors: | Wang Min Fang Changshui |
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| Abstract: | The expressions for voltage response figure of merit M in oblique- ly cut ATGSP crystals and optimum cut angle have been derived.The principle dielectric constants and pyroelectric coefficients were mea- sured.The M values of different oblique angles and rules of modification with temperature have been calculated.The results obtained show that the devices'voltage response figure of merit can be greatly increased by using obliquely cut ATGSP crystals. |
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| Keywords: | pyroelectric crystal voltage response figure of merit |
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