| 低电压ESD对2SC3356造成的事件相关潜在性失效 |
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| 引用本文： | 祁树锋,杨洁,刘红兵,刘尚合,巨楷如.低电压ESD对2SC3356造成的事件相关潜在性失效[J].河北师范大学学报(自然科学版),2007,31(3):326-328,336. |
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| 作者姓名： | 祁树锋 杨洁 刘红兵 刘尚合 巨楷如 |
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| 作者单位： | 1. 军械工程学院,静电与电磁防护研究所,河北,石家庄,050003
2. 中国电子科技集团,第13研究所,河北,石家庄,050051 |
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| 摘 要： | 研究了低电压的静电放电(ESD)对微电子器件造成的事件相关潜在性失效.从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力,发现,随着ESD应力次数的增加,器件的放大特性hFE逐渐退化,并且当电压达到一定水平,多次的ESD可以使器件失效.研究表明,低电压的ESD对器件造成的损伤具有潜在性和积累性.
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| 关 键 词： | ESD 微电子器件 潜在性失效 |
| 文章编号： | 1000-5854（2007）03-0326-03 |
| 修稿时间： | 2006-12-07 |
Event Correlation Latent Failure of 2SC3356 Caused by Low-level ESD |
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| QI Shu-feng,YANG Jie,LIU Hong-bing,LIU Shang-hei,JU Kai-ru.Event Correlation Latent Failure of 2SC3356 Caused by Low-level ESD[J].Journal of Hebei Normal University,2007,31(3):326-328,336. |
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| Authors: | QI Shu-feng YANG Jie LIU Hong-bing LIU Shang-hei JU Kai-ru |
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| Institution: | 1. Electrostatic and Electromagnetic Protection Research Institute, Ordnance Engineering College, Hebei Shijiazhuang 050003, China; 2.The 13th Research Institute,China Electron Group,Hebei Shijiazhuang 050051,China |
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| Abstract: | The problem of event correlation latent failure of microelectric device caused by low-level electrostatic discharge(ESD)is studied.Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356;it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses.If the level of ESD voltage was high enough,multiple ESD stresses could cause 2SC3356 failure.It was clear that the damage of semiconductor device caused by low-level ESD had latent and accumulated effect. |
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| Keywords: | ESD microelectric device latent failure |
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