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Al—Ge共蒸膜晶化过程的计算机模拟
引用本文:王戴木.Al—Ge共蒸膜晶化过程的计算机模拟[J].阜阳师范学院学报(自然科学版),1998(2):1-4.
作者姓名:王戴木
作者单位:阜阳师院物理系 236032
摘    要:本文对Al—Ge共蒸膜中分形晶化的过程进行了计算机模拟研究。结果表明:分形晶化过程中晶核长大效应明显影响分形体结构。在较高Ge原子百分比共蒸膜中晶化时释放出的较多的晶化潜热以及在较高的退火温度时具有的较高热激活能都促使晶核长大。

关 键 词:模拟  分形晶化

Simulation of Crystallization Processes in Co-sputtered Al-Ge films
Wang Daimu.Simulation of Crystallization Processes in Co-sputtered Al-Ge films[J].Journal of Fuyang Teachers College:Natural Science,1998(2):1-4.
Authors:Wang Daimu
Abstract:In this study.we simulate the fractal crystallization processes in co-sputtered Al-Ge films by use of computer. The results indicate that the growth effect of nuclei strongly influences the fractal structure during crystallization. The latent heat released by crystallization in co-sputtered films with higher Ge at % and the heat activation energy at higher annealing temperature may promote the growth of nuclei
Keywords:Simulation  fractal crystallization  
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