| 新型锗硅应变层异质结构双极器件研究进展 |
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| 引用本文： | 黄流兴,郑茳.新型锗硅应变层异质结构双极器件研究进展[J].大自然探索,1993,12(3):65-76. |
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| 作者姓名： | 黄流兴 郑茳 |
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| 作者单位： | 东南大学
(黄流兴，郑茳)，东南大学(魏同立) |
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| 摘 要： |
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| 关 键 词： | 锗硅应变层 异质结构 晶体管 |
THE RESEARCH ADVANCES IN NOVEL SIGE STRAINED LAYER HETEROJUNCTION BIPOLAR DEVICES |
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| Huang Liuxing,Zheng Jiang,Wei Tongli Microelectronics Center,Southeast University.THE RESEARCH ADVANCES IN NOVEL SIGE STRAINED LAYER HETEROJUNCTION BIPOLAR DEVICES[J].Discovery of Nature,1993,12(3):65-76. |
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| Authors: | Huang Liuxing Zheng Jiang Wei Tongli Microelectronics Center Southeast University |
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| Abstract: | The development of novel SiGe materails and devices ushered a new era of silicon heterostructures and band-engineered devices. Modern advanced epitaxial growth technology has made the widely application of SiGe strained layermaterials possible. In this paper we reviewed the research status and development of novel SiGe stained layerbeterostructure devices, and focused on disscussion of the properties of those materisls, the performance of heterojunctionbipolar devices and the prospective applications. |
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| Keywords: | SiGe strained layer heterostructure heterojunction bipolar transistor band engineering |
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