| 器件钝化中的应力中心和应力补偿效应 |
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| 引用本文： | 李丹之.器件钝化中的应力中心和应力补偿效应[J].应用科学学报,1989,7(1):91-94. |
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| 作者姓名： | 李丹之 |
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| 作者单位： | 上海科学技术大学分部 |
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| 摘 要： | 半导体器件的表面钝化是器件自身的稳定性和可靠性所必需.然而器件衬底和表面氧化膜之间常因热学性质不匹配而产生较大的应力,如高温氧化后的硅片中的张应力1].由于Si-SiO2界面的应力增加了结构内部的缺陷,使器件的电流增益β明显下降.
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| 关 键 词： | 器件 钝化 应力中心 应力补偿 |
| 收稿时间： | 1987-10-14 |
| 修稿时间： | 1988-03-10 |
A MODEL OF STRAIN CENTERS AND STRAIN COMPENSATION FOR DEVICE PASSIVATION |
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| LI DANZHI.A MODEL OF STRAIN CENTERS AND STRAIN COMPENSATION FOR DEVICE PASSIVATION[J].Journal of Applied Sciences,1989,7(1):91-94. |
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| Authors: | LI DANZHI |
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| Institution: | Branch School of Shanghai University of Science and Technology |
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| Abstract: | Based on the infrared strain distribution photo taken and the shape of spots on the Si wafer after thermal oxidation, this paper presents a model of strain conters. The model brings to light the minority carrier life dependence on strain centers and explains the improvement of transistor current gain due to the strain compensation of the double layer dielectric films. |
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