| La_2O_3掺杂对BaBi_4Ti_4O_(15)陶瓷压电性能的影响 |
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| 引用本文： | 杨兴化,黄金亮,顾永军,汪潇,崔春伟.La_2O_3掺杂对BaBi_4Ti_4O_(15)陶瓷压电性能的影响[J].河南科技大学学报(自然科学版),2008,29(6). |
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| 作者姓名： | 杨兴化 黄金亮 顾永军 汪潇 崔春伟 |
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| 作者单位： | 河南科技大学,材料科学与工程学院,河南,洛阳,471003 |
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| 基金项目： | 河南省杰出青年科学基金，河南科技大学校科研和教改项目 |
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| 摘 要： | 采用传统固相烧结工艺制备了La掺杂量分别为0,0.1,0.25,0.5 mol的BaBi4Ti4O15 (BBT) 压电陶瓷.通过SEM和XRD分析了BBT陶瓷的表面形貌和物相结构;用介电常数测试仪(LCR)和准静态d33测试仪分别测量了陶瓷的介电常数,介电损耗和压电常数.结果表明:A位La掺杂并未改变BBT陶瓷的晶体结构; 虽然随着La掺杂量的增加(从0～0.5 mol),陶瓷的烧结温度有所提高(从1120℃提高到1150℃),然而它拓宽了BBT陶瓷的烧结温区(从20℃提高到50℃),并细化了陶瓷晶粒; La掺杂量为0.1时,BBLT陶瓷的压电常数比未掺杂的陶瓷增大了将近一倍(13pC/N),同时,与其它掺杂量的BBLT陶瓷相比,该掺杂量的BBLT陶瓷具有同频率下最大的介电常数及最小的介电损耗.
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| 关 键 词： | 钛酸铋钡 陶瓷 固相烧结 La掺杂 压电常数 |
Effect of Doped La_2O_3 on Piezoelectric Property of BaBi_4Ti_4O_(15) Ceramic |
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| YANG Xing-Hua,HUANG Jin-Liang,GU Yong-Jun,WANG Xiao,CUI Chun-Wei.Effect of Doped La_2O_3 on Piezoelectric Property of BaBi_4Ti_4O_(15) Ceramic[J].Journal of Henan University of Science & Technology:Natural Science,2008,29(6). |
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| Authors: | YANG Xing-Hua HUANG Jin-Liang GU Yong-Jun WANG Xiao CUI Chun-Wei |
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| Institution: | YANG Xing-Hua,HUANG Jin-Liang,GU Yong-Jun,WANG Xiao,CUI Chun-Wei (Materials Science & Engineering College,Henan University of Science & Technology,Luoyang 471003,China) |
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| Abstract: | The BaBi4Ti4O15(BBT) piezoelectric ceramic of La doping by traditional solid phase sintering technics was prepared,the amount of doping was 0, 0.1, 0.25, 0.5 mol respectively.The surface appearance and phase structure were analyzed by using scanning electron microscopy(SEM) and X-ray diffraction analysis(XRD). The dielectric constant,dielectric loss and piezoelectric constant were measured by using LCR meter and quasistate d33 meter respectively.The results showed La doping of A site did not change the crys... |
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| Keywords: | BaBi4Ti4O15 Ceramic Solid phase sintering La doping Piezoelectric constant |
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