| PZT／SiO_2／Si界面的XPS分析 |
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| 引用本文： | 于军,周文利,曹广军,谢基凡.PZT／SiO_2／Si界面的XPS分析[J].华中科技大学学报(自然科学版),1996(1). |
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| 作者姓名： | 于军 周文利 曹广军 谢基凡 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 基金项目： | 国家863高科技计划资助 |
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| 摘 要： | 采用ＳＯＬ－ＧＥＬ工艺在ＳｉＯ２／Ｓｉ衬底上制备了铁电薄膜，对ＰＺＴ／ＳｉＯ２／Ｓｉ结构进行了ＸＰＳ分析，结果表明，在ＰＺＴ铁电薄膜和硅衬底之间加ＳｉＯ２使Ｆ／Ｓ界面得到了改善．
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| 关 键 词： | 铁电薄膜 界面 XPS |
A Study of the Interface of the PZT/SiO_2/SiStructure with XPS Spectra |
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| Yu Jun, Zhou Wenli, Cao Guangjun, Xie Jifan.A Study of the Interface of the PZT/SiO_2/SiStructure with XPS Spectra[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(1). |
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| Authors: | Yu Jun Zhou Wenli Cao Guangjun Xie Jifan |
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| Institution: | Yu Jun; Zhou Wenli; Cao Guangjun; Xie Jifan |
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| Abstract: | A study of the PZT/SiO2/Si structure with XPS spectra has been made. Experimental results show that a SiO2 layer of a definite thickness between the St and PZT films prepared by the SolGel technique functions as a buffer, and no diffusion of elements in PZT to the St substrate is found,such as that occurring in the interface of PZT/Si accompanied by a reaction with the substrate.The F/(O)S interface is improved by the prevention of Ph,Ti and O elements from diffusing into the interface with SiO2. |
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| Keywords: | s: ferroelectric films interface XPS spectra |
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