| 发光多孔硅的制备条件研究 |
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| 引用本文： | 彭爱华,谢二庆. 发光多孔硅的制备条件研究[J]. 贵州大学学报(自然科学版), 2009, 26(2): 112-115 |
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| 作者姓名： | 彭爱华 谢二庆 |
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| 作者单位： | 中国石油大学(华东)物理科学与技术学院,山东,青岛,266555;中国石油大学(华东)物理科学与技术学院,山东,青岛,266555 |
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| 摘 要： | 用电化学方法制备了发光多孔硅,研究了电流密度,电阻率,退火条件对多孔硅发光的影响,并对发光机理做了相应的分析;发现了制备方法更为简便的镍酸镧电极取代铝电极工艺。
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| 关 键 词： | 多孔硅 光致发光 电化学 |
Study on Preparation of Porous Silicon |
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| PENG Ai-hua,XIE Er-qing. Study on Preparation of Porous Silicon[J]. Journal of Guizhou University(Natural Science), 2009, 26(2): 112-115 |
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| Authors: | PENG Ai-hua XIE Er-qing |
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| Affiliation: | School of Physical Science and Technology;China University of Petroleum;Qingdao 266555;China |
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| Abstract: | Porous silicon was prepared through electrochemical process.The effect of current density,resistivity and anneal on photoluminescence properties of porous silicon was studied.The mechanism was analyzed.LaNiO3 electrode whose preparation method is simple can replace Al electrode. |
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| Keywords: | porous silicon photoluminescence electrochemical |
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