非定向氧化锌纳米线阵列的场发射

使用热蒸发的方法在硅基底上制备了非定向氧化锌（ZnO）单晶纳米线阵列。经过热蒸发之后，在硅基底上形成一层均匀分布的 ZnO 点。在这些 ZnO 点上生长出非定向的 ZnO 纳米线阵列，其中的纳米线直径大约在 10 到 20nm 之间。考虑到实用，在制备样品的过程中硅基底的温度始终保持在 500℃ 以下。然后测量了这些非定向 ZnO 纳米线阵列的场发射特性。在 5.5V·μm^-1 场强下得到了 10μA·cm^-2 的场发射电流密度；同时使用透明阳极技术观察了其场发射中心的分布。

Field Emission from a Non-Aligned ZnO Nanowire Array

An array of non-aligned monocrystalline zinc oxide nanowires (ZnO NWs) is fabricated on a silicon substrate by thermal evaporation. The non-aligned ZnO NWs in the array are approximately 10～20 nm in diameter. During the fabrication, the temperature around the substrate is lower 500℃, which is conducive to practical application. Field emission is available from these ZnO NWs. The electric field that extracts 10μA·cm^-2 current density is measured to be 5.5V·μm^-1. Moreover, the emission site distribution (ESD) is also studied and the field emission is found from the whole sample surface, suggesting that the screen effect is almost avoided.