| Preparation of Cu（In,Ga）Se2 thin film by sputtering from Cu（In,Ga）Se2 quaternary target |
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| 作者姓名： | Jiang Liu Daming Zhuang Hexin Luan Mingjie Cao Min Xie Xiaolong Li |
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| 作者单位： | Department of Mechanical Engineering, Tsinghua University |
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| 基金项目： | supported by Initiative Scientific Research Project of Tsinghua University |
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| 摘 要： | Cu(In,Ga)Se2 (CIGS) thin films were prepared by directly sputtering Cu(In,Ga)Se2 quaternary target consisting of Cu:In:Ga:Se 25:17.5:7.5:50 at%. The composition and structure of CIGS layers have been investigated after annealing at 550 ℃ under vacuum and a Se-containing atmosphere. The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with three different absorber thicknesses were fabricated using a soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area.
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| 关 键 词： | CIGS Thin film Magnetron sputtering Se-containing atmosphere Solar cell |
| 收稿时间： | 29 August 2012 |
Preparation of Cu(In,Ga)Se2 thin film by sputtering
from Cu(In,Ga)Se2 quaternary target |
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| Jiang Liu,Daming Zhuang,Hexin Luan,Mingjie Cao,Min Xie,Xiaolong Li.Preparation of Cu(In,Ga)Se2 thin film by sputtering
from Cu(In,Ga)Se2 quaternary target[J].Progress in Natural Science,2013,23(2):133-138. |
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| Authors: | Jiang Liu Daming Zhuang Hexin Luan Mingjie Cao Min Xie and Xiaolong Li |
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| Institution: | Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | Cu(In,Ga)Se2 (CIGS) thin films were prepared by directly sputtering Cu(In,Ga)Se2 quaternary target consisting of Cu:In:Ga:Se=25:17.5:7.5:50 at%. The composition and structure of CIGS layers have been investigated after annealing at 550 °C under vacuum and a Se-containing atmosphere. The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with three different absorber thicknesses were fabricated using a soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm?2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area. |
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| Keywords: | CIGS Thin film Magnetron sputtering Se-containing atmosphere Solar cell |
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