| 化合物半导体CdSe和ZnSe材料的状态密度 |
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| 引用本文： | 刘贵立 张国英. 化合物半导体CdSe和ZnSe材料的状态密度[J]. 辽宁大学学报(自然科学版), 1995, 22(4): 43-46 |
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| 作者姓名： | 刘贵立 张国英 |
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| 作者单位： | [1]沈阳工业大学基础部 [2]东北微电子研究所 |
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| 摘 要： | 本文用Ｔ．Ｂ．－Ｒｏｃｕｒｓｉｏｎ方法计算了化合物半导体ＣｄＳｅ和ＺｎＳｅ的状态密度曲线，求出了费米能级和带隙，与实验结果符合得很好。
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| 关 键 词： | 状态密度 费米能级 化合物半导体 硒化镉 硒化锌 |
Density of States for Compound Semiconductor CdSeandZnSeMaterials |
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| Liu Guili. Density of States for Compound Semiconductor CdSeandZnSeMaterials[J]. Journal of Liaoning University(Natural Sciences Edition), 1995, 22(4): 43-46 |
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| Authors: | Liu Guili |
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| Affiliation: | Liu Guili Department of Basic Courses,ShenyangUniversity of Technoloy zhangGuoying Northeast Microelectronics Institute of Ministry of Electromics Industry HuangHeluan Department of Electronic Science and Engineering,Liaoning University |
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| Abstract: | In this paper,the density of states are calculated by T. B-Recursionmethod for compound semiconductors CdSe and ZnSe. Fermi enevgy and the band gap aredetermined.Thier magnitude are well agree with the experimental data. |
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| Keywords: | Recursion method Density of states Fermi enevgy Band gap. |
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