| 基于Simulink的忆阻器模型 |
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| 引用本文： | 宋卫平,丁山传,宁爱平. 基于Simulink的忆阻器模型[J]. 太原科技大学学报, 2014, 0(1): 23-27 |
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| 作者姓名： | 宋卫平 丁山传 宁爱平 |
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| 作者单位： | 太原科技大学电子信息工程学院,太原030024 |
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| 基金项目： | 山西省教学改革基金（J2012063） |
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| 摘 要： | 为了使忆阻器具有与其他器件相结合的能力,本文在惠普实验室提出的忆阻器物理模型电路关系的基础上,在Simulink中用二种方法对忆阻器进行了双端口建模,方便准确的实现了对于忆阻器的仿真。与编写M文件、构建图形用户界面和搭建输入输出模型的建模方法相比,基于Simulink的双端口模型不仅能够方便准确的观察忆阻器的输入输出特性,而且具有更广阔的应用范围,对于忆阻器的研究有一定的指导作用。
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| 关 键 词： | 忆阻器 Simulink 仿真模型 |
Memristor Modeling Based on Simulink |
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| SONG Wei-ping,DING Shan-chuan,NING Ai-ping. Memristor Modeling Based on Simulink[J]. Journal of Taiyuan University of Science and Technology, 2014, 0(1): 23-27 |
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| Authors: | SONG Wei-ping DING Shan-chuan NING Ai-ping |
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| Affiliation: | ( College of Electronic and Information Engineering,Taiyuan University of Science and Technology, Taiyuan 030024, China ) |
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| Abstract: | With the development of memristor, the ability of combined with other devices is required. So this article puts forward two kinds of dual port modeling based on Simulink,which are conducive to the further development. Compared with writing m-files, constructing the input-output model and building a graphical user interface, the memristor modeling based on Simulink are convenient to observe the features of memristor and well suited to re- search the properties of memristor. They have a broader range of application and provide guidance for the study of memristor. |
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| Keywords: | memristor Simulink physical model |
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