Analytical Frequency-Dependent Model for Transmission Lines on RF-CMOS Lossy Substrates |
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Authors: | Zuochang Ye, , Wenjian Yu, » ,Zhiping Yu, ý |
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Affiliation: | †Department of Computer Science and Technology, Tsinghua University, Beijing 100084, China |
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Abstract: | Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, lossy substrates based on confor- mal mapping, and region subdivision. Tests show that the line parameters (per unit length) obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits. |
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Keywords: | transmission lines frequency dependence capacitance radio frequency complementary metaloxide semiconductor (RF-CMOS) circuit characteristics |
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