| Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition |
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| 作者姓名： | 刘佳磊 梁仁荣 王敬 徐阳 许军 刘志弘 |
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| 作者单位： | Institute of Microelectronics Tsinghua University，Institute of Microelectronics Tsinghua University，Institute of Microelectronics Tsinghua University，Institute of Microelectronics Tsinghua University，Institute of Microelectronics Tsinghua University，Institute of Microelectronics Tsinghua University，Beijing 100084 China，Beijing 100084 China，Beijing 100084 China，Beijing 100084 China，Beijing 100084 China，Beijing 100084 China |
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| 基金项目： | 国家自然科学基金;清华大学智能技术与系统国家重点实验室开放性基金 |
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| 摘 要： | The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dis- location density.
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| 关 键 词： | 锗元素 缓冲器 超高真空化学 蒸汽沉淀 |
| 收稿时间： | 2007-01-12 |
| 修稿时间： | 2007-06-08 |
Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition |
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| Jialei Liu, &#x;Ê, Liang Renrong, &#x;ì&#x;, Jing Wang, , Yang Xu, &#x;, Jun Xu, » ,Zhihong Liu, &#x;ý.Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition[J].Tsinghua Science and Technology,2007,12(6):747-751. |
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| Authors: | Jialei Liu &#x;Ê Liang Renrong &#x;ì&#x; Jing Wang Yang Xu &#x; Jun Xu » Zhihong Liu &#x;ý |
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| Institution: | aInstitute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dis- location density. |
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| Keywords: | pure Ge SiGe buffer oxidation ultrahigh vacuum chemical vapor deposition |
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