真空电弧沉积簿膜厚度分布计算

该文从离子电流密度空间分布函数的角度出发，针对自由电弧沉积和磁场控制电弧沉积两种情况，分别提出了单斑点和多斑点计算模型，进行了平面基片上真空电弧沉积的金属薄膜厚度分布的计算。计算结果表明，自由电弧沉积的膜厚分布曲线存在峰值现象，而磁控电弧沉积的膜厚分布曲线可使该峰值现象得到消除；同时，磁控电弧沉积的膜厚分布均匀性与阴极半径和基片配置距离密切相关，当两者比值选取适当时，可获得较均匀的膜厚分布；旋转基片上所获得的膜厚分布均匀性较之静止基片上获得的膜厚分布均匀性要好。理论计算值与实验测量值吻合。

CALCULATION OF FILM THICKNESS DISTRIBUTIONPROVIDED BY VACUUM ARC DEPOSITIONWANG

omputer caloulation of pure metal film thickness disiribution previded by theVacuum arc ion boam deposition technique is presented in this paper. For therandom arc with a low arc current, a model of single cathode spot with ion beamflux taking into account the cosine function spatial distribution is deduced. For theare steered by an external magnetie field, whieh is parallel to the cathode surface ,a multiple cathode spots model is developed. And calculation comparison betweenthe static substrate and rotating substrate is made. Results show that, the filmthickness distribution is non-uniform when the are is not controlled and tends fobe uniform when the arc is steered by an external parallel magnetic field if thecathode geometry and substrate location are well chosen. Also, film thicknessdistribntion is more uniform on a rotating substrate then that on a static substrate.Calculation results correspond to the experimental results.