单电子晶体管/场效应管混合存储单元数值分析

基于背景电荷不敏感单电子晶体管／场效应晶体管混合存储单元利用单电子晶体管源漏电流随栅电压周期振荡的牲工作，以半经典的单电子正统理论为基础，采用计算机数值模拟的方法，分析了背景电荷不敏感单电子晶体管／常规场效应晶体管混合存储单元的工作原理和基本特性，提出了存储单元中分别以三结电容耦合单电子晶体管和电子旋转栅替代双结单电子晶体管的新结构，其主要思想是通过增加单电子器件中的串联随道结数来抑制各种噪声。模

Numerical Analysis of Single-Electron Transistor/Field-Effect Transistor Hyb rid Memory Cell

The background charge independent single electron transistor (SET)/field effect transistor (FET) hybrid memory cell works on the basis of the periodic dependence of the drain current of SET on its gate voltage. The characteristics of the hybrid memory cell were analyzed based on the semiclassical single electron orthodox theory by computer aided numerical simulation. New structures of replacing two junction SET with three junction capacitance coupled SET and single electron turnstile respectively were presented. The main idea is to improve the anti noise performance by increasing the number of tunneling junctions in series. The simulation results indicate the improvements in system performance, especially the anit noise performance of the new structure.