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IGBT功率模块热管理研究
引用本文:翟鑫梦,李月锋,李抒智,陈俊锋,姜维宾,安勇,臧天程,苏晓锋,张明鹏,赵巍,许良鹏,邹军.IGBT功率模块热管理研究[J].上海应用技术学院学报,2020,20(3):211-219.
作者姓名:翟鑫梦  李月锋  李抒智  陈俊锋  姜维宾  安勇  臧天程  苏晓锋  张明鹏  赵巍  许良鹏  邹军
作者单位:上海应用技术大学 理学院, 上海 201418;上海产业技术研究院, 上海 201206;浙江绿龙新材料有限公司, 浙江 海宁 314419;烟台台芯电子科技有限公司, 山东 烟台 264006;烟台华创智能装备有限公司, 山东 烟台 264006;北京创世杰科技发展有限公司 北京 100070;北京飞凯曼科技有限公司, 北京 102400;上海环东光电科技股份有限公司, 上海 201108
基金项目:国家自然科学基金(51302171);上海联盟计划(LM201978);上海市学科能力建设项目(14500503300);上海市产学合作项目(沪XY-2013-61);校企合作项目(sit20170824001)资助
摘    要:随着绝缘栅双极晶体管(IGBT)向高功率和高集成度方向发展,在结构和性能上有很大的改进,热产生问题日益突出,对散热的要求越来越高,IGBT芯片是产生热量的核心功能器件,但热量的积累会严重影响器件的工作性能。因此,对IGBT模块的温度进行有效地检测和管理是十分重要的环节。综述了IGBT模块的研究现状、研究热点以及散热相关技术,主要介绍了主动散热和被动散热的方法、以及IGBT功率模块的热阻网络系统和散热系统设计的主要步骤,和减小热阻来增强散热的方法。

关 键 词:IGBT功率模块  热管理  热管
收稿时间:2020/1/20 0:00:00

Research of Thermal Management of IGBT Power Modules
ZHAI Xinmeng,LI Yuefeng,LI Shuzhi,CHEN Junfeng,JIANG Weibin,AN Yong,ZANG Tiancheng,SU Xiaofeng,ZHANG Mingpeng,ZHAO Wei,XU Liangpeng,ZOU Jun.Research of Thermal Management of IGBT Power Modules[J].Journal of Shanghai Institute of Technology: Natural Science,2020,20(3):211-219.
Authors:ZHAI Xinmeng  LI Yuefeng  LI Shuzhi  CHEN Junfeng  JIANG Weibin  AN Yong  ZANG Tiancheng  SU Xiaofeng  ZHANG Mingpeng  ZHAO Wei  XU Liangpeng  ZOU Jun
Institution:School of Sciences, Shanghai Insitute of Technology, Shanghai 201418, China;Shanghai Institute of Industrial Technology, Shanghai 201206, China;Zhejiang Lvlong New Material Co., Ltd., Haining 314419, Zhejiang, China;Yantai Taixin Electronic Technology Co., Ltd., Yantai 264006, Shandong, China;Yantai Huachuang Intelligent Equipment Co., Ltd., Yantai 264006, Shandong, China;Beijing Chuangshijie Technology Development Co., Ltd., Beijing 100070, China;Beijing Feikaiman Technology Co., Ltd., Beijing 102400, China;Shanghai Huandong Optoelectronics Technology Co., Ltd., Shanghai 201108, China
Abstract:With the development of insulated gate bipolar transistor (IGBT) towards high power and high integration, great improvement has been made in structure and performance. The problem of heat generation is increasingly prominent, and the requirement of heat dissipation is higher and higher. IGBT chip is the core functional device that generates heat, but the accumulation of heat exerts an adverse effect on the performance of the device. Therefore, it is of great significance to detect and manage the temperature of IGBT module effectively. The research status, research hotspot and heat dissipation technology of IGBT module were summarized, the methods of active and passive heat dissipation were introduced in detail. In order to further understand the thermal management of IGBT module, the main steps of the thermal resistance network system and the cooling system design of IGBT power module, as well as the method of enhancing the cooling by reducing the thermal resistance were introduced.
Keywords:IGBT power module  thermal management  heat dissipation technology
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