| GaAs／Ge_xSi_（1－x）系统的电子能带结构 |
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| 引用本文： | 徐至中.GaAs／Ge_xSi_（1－x）系统的电子能带结构[J].复旦学报(自然科学版),1995(3). |
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| 作者姓名： | 徐至中 |
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| 作者单位： | 复旦大学物理学系 |
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| 摘 要： | 采用紧束缚方法计算了生长在ＧｅｘＳｉ１－ｘ合金（００１）面上的应变ＧａＡｓ层以及生长在Ｓｉ（００１）面上的应变超晶格（Ｓｉ２）４／（ＧａＡｓ）４的电子能带结构。讨论了应变对电子能带结构的影响．
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| 关 键 词： | 应变外延层 应变超晶格 标度指数 紧束缚方法 布里渊区折叠 |
Electronic band Structures of GaAs/Ge_xSi_(1-x) systems |
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| Xu Zhizhong.Electronic band Structures of GaAs/Ge_xSi_(1-x) systems[J].Journal of Fudan University(Natural Science),1995(3). |
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| Authors: | Xu Zhizhong |
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| Institution: | Department of Physics |
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| Abstract: | The electronic band Structures of strained strained GaAs layers grown on GexSi1-x alloys in (001) plane and strained superlattices(Si2)4/(GaAs)4 grown on Si substrates in (001)plane are calculated in tight-binding frame. The effects of strains on the electronic band structures are discussed. |
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| Keywords: | strained epitaxial layers strained superlattices scaling indices tight-binding method Brillouin zone folding |
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