Ag在单晶硅(111)基面上的反应润湿与固液界面能计算

采用滴座法研究Ag在高定向生长单晶硅(111)基面上的高温反应润湿行为及固液界面结构.结果表明,Ag/Si(111)润湿体系在1 200℃高温下的最终润湿角为96.7°,呈现不润湿现象,反应润湿界面有Si原子溶解到液态Ag中,但没有新相生成,Si和Ag仍以单质形式存在,因此Ag(l)/Si(s)界面能保持不变.通过计算得到1 200℃下Ag/Si(111)润湿体系的固体表面能和固液界面能分别为565.6和667.1 mJ.m-2.

Reactive wetting and calculation of solid-liquid interfacial energy of silver-silicon(111)

In this paper,the reactive wetting behavior of silver and the solid-liquid interfacial structure of reactive wetting were investigated on the crystal face(111) of the single crystal silicon by the sessile drop technique at high temperature.It was showed that the final contact angle of silver-silicon(111) was 96.7°at 1 200 ℃,appearing unwetting.Atomic diffusion of silicon was detected in the molten silver matrix.However,no new phase emerged at the interface,with the Si and Ag existing in the form of simple substance.Thus the interfacial energy of silver-silicon(111) remained unchanged.The calculated solid surface energy of silicon and solid-liquid interfacial energy of silver-silicon(111) were 565.6 and 667.1 mJ·m-2 respectively at 1 200 ℃.