| p型半导体霍尔系数极值新结论的理论与实验验证 |
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| 引用本文： | 冯文修,刘剑,陈蒲生.p型半导体霍尔系数极值新结论的理论与实验验证[J].华南理工大学学报(自然科学版),2000,28(11):119-124. |
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| 作者姓名： | 冯文修 刘剑 陈蒲生 |
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| 作者单位： | 华南理工大学应用物理系,广东广州 |
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| 摘 要： | 用文献「４」中的理论和实验结果论证了本文作者在１９８７年首先采用新的方法求解ｐ型半导体在过渡温度范围的霍尔系数极值所得到的一系列新结论。理论和实验验证结果的一致证明了新的霍尔系数极值是正确的。作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
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| 关 键 词： | p型半导体 霍尔系数极值 极值因数 霍尔效应 |
| 修稿时间： | 1999-12-29 |
Theoretical and Experimental Evidences of the Hall Coefficient Extremum in p-Type Semiconductor |
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| FENG Wen_xiu,LIU Jian,CHEN Pu_sheng,TIAN Pu_yan.Theoretical and Experimental Evidences of the Hall Coefficient Extremum in p-Type Semiconductor[J].Journal of South China University of Technology(Natural Science Edition),2000,28(11):119-124. |
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| Authors: | FENG Wen_xiu LIU Jian CHEN Pu_sheng TIAN Pu_yan |
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| Abstract: | We show that the extreme value of the p_type semiconductor Hall coefficient in the transitional temperature regime obtained in our previous paper2] can be further evidenced on the basis of the theory and experiment given in Ref.4]. We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors. |
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| Keywords: | p_type semiconductor galvanomagnetic effect Hall coefficient extremum extremum factor |
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