| PECVD SiO_2/InP结构的AES和XPS分析 |
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| 引用本文： | 徐俊明,江若琏,刘青淮,王凯,郑有炓.PECVD SiO_2/InP结构的AES和XPS分析[J].南京大学学报(自然科学版),1986(4). |
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| 作者姓名： | 徐俊明 江若琏 刘青淮 王凯 郑有炓 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： | 本文介绍了经不同表面处理制成的PECVD Si为_2/InP 結构的俄歇电子能谱(AES)和X光电子能谱(XPS),分析了SiO_2/InP结构介质层、界面过渡区和体内区的化学组分和组志。并研究了表面处理对SiO_2/InP界面过渡区宽度及其化学物理结构的影响。
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| 关 键 词： | 等离子增强化学汽相淀积 俄歇电子能谱 X光电子能谱 C—V特性滞后 |
AES AND XPS ANALYSIS OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITED SiO_2/lnP STRUCTURE |
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| Xu Junming Jian Ruolian liu qinhuai Wang kai Zheng Youdou.AES AND XPS ANALYSIS OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITED SiO_2/lnP STRUCTURE[J].Journal of Nanjing University: Nat Sci Ed,1986(4). |
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| Authors: | Xu Junming Jian Ruolian liu qinhuai Wang kai Zheng Youdou |
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| Institution: | Xu Junming Jian Ruolian liu qinhuai Wang kai Zheng Youdou |
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| Abstract: | This paper presents the Auger electron spectroscopy and the X-ray photoelectron spectroscopy of the PECVD SiO_2/InP structure for uarious surface processing. The chemical composition and bonding state were analyzed for the dielectric layer, the interfacial transition region and the substrate of the structure. We also investigated the surface pretreatment effects on interfacial transition region width, chemical and physical properties of the structure. |
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| Keywords: | Plasma-enhanced chemical vapor deposition Auger electron spectroscopy X-ray photo-electron spectroscopy C-V characteristic hysteresis |
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