| 受光区具有薄n层结构的光控晶闸管的研究 |
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| 引用本文： | 赵善麒,高鼎三,潘福泉.受光区具有薄n层结构的光控晶闸管的研究[J].吉林大学学报(理学版),1990(3). |
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| 作者姓名： | 赵善麒 高鼎三 潘福泉 |
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| 作者单位： | 吉林大学电子科学系
(赵善麒，高鼎三)，沈阳工业大学电子工程系(潘福泉) |
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| 摘 要： | 本文研讨了具有薄n层结构的受光区,对提高光控晶闸管的光触发灵敏度的作用及触发灵敏度与dV/dt耐量间的协调关系,结果表明,这种结构可使其具有较高的触发灵敏度,可较好的协调灵敏度与dV/dt耐量间的关系。并利用这一结构,研制出了高灵敏度的500A,2000V直接光触发晶闸管。
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| 关 键 词： | 受光区 光控晶闸管 触发灵敏度 dV/dt耐量 |
Studies on the Light Triggered Thyristor with an n-Emitter Layer over the Light-Sensitive Gate Area |
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| Zhao Shanqi and Gao Dingsan.Studies on the Light Triggered Thyristor with an n-Emitter Layer over the Light-Sensitive Gate Area[J].Journal of Jilin University: Sci Ed,1990(3). |
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| Authors: | Zhao Shanqi and Gao Dingsan |
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| Abstract: | A 500 A, 2000 V, 45 mm dia. directly light triggered thyristor has been developed. This device has got an n-emitter layer over the light-sensitive gate area, because of this, an excellent tradeoff relation between light triggering sensitivity and dV/dt capability is achieved. This result is demonstrated by both theoretical analysis and experiment in this paper. |
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| Keywords: | light sensitive gate area light triggered thyristor light triggering sensitivity dV/dt capability |
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