| UHF power amplifier design in 0.35μm SiGe BiCMOS |
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| 引用本文： | 宋家友.UHF power amplifier design in 0.35μm SiGe BiCMOS[J].高技术通讯(英文版),2009,15(2):147-150. |
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| 作者姓名： | 宋家友 |
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| 作者单位： | Song Jiayou(Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,P.R.China;School of Information Engineering,Zhengzhou University,Zhengzhou 450052,P.R.China);Li Zhiqun,Wang Zhigon(Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,P.R.China) |
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| 基金项目： | Supported by the High Technology Research and Development Programme of China (2006AA03Z418) |
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| 摘 要： | A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μm SiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re- spectively,and the maximal output power is 23.5 dBm.At output power of 23.1 dBm,the PAE(power added efficiency)is...
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| 关 键 词： | BiCMOS工艺 放大器设计 高频功率 SiGe 最大输出功率 功率放大器 小信号增益 匹配网络 |
UHF power amplifier design in 0.35μm SiGe BiCMOS |
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| Song Jiayou,Li Zhiqun,Wang Zhigon.UHF power amplifier design in 0.35μm SiGe BiCMOS[J].High Technology Letters,2009,15(2):147-150. |
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| Authors: | Song Jiayou Li Zhiqun Wang Zhigon |
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| Institution: | 1. Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,P.R.China;School of Information Engineering,Zhengzhou University,Zhengzhou 450052,P.R.China
2. Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,P.R.China |
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| Abstract: | A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz's 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage, the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB, the input and output reflectance are less than -24dB and -10dB, respectively, and the maximal output power is 23.5 dBm. At output power of 23.1 dBm, the PAE (power added efficiency) is 30.2%, the IMD2 and IMD3 are less than -32 dBc and -46 dBc, respectively. The chip size is 1.27mm×0.9mm. |
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| Keywords: | power amplifier SiGe BiCMOS heterojunction bipolar transistor |
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