| BaBrCl:Ce3+光存储性能的研究 |
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| 引用本文： | 董金凤,王永生,孟宪国,王丽辉.BaBrCl:Ce3+光存储性能的研究[J].北京交通大学学报(自然科学版),2006,30(3):34-36,42. |
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| 作者姓名： | 董金凤 王永生 孟宪国 王丽辉 |
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| 作者单位： | 北京交通大学,理学院,北京,100044;北京交通大学,理学院,北京,100044;北京交通大学,理学院,北京,100044;北京交通大学,理学院,北京,100044 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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教育部优秀青年教师资助计划
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教育部重点项目 |
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| 摘 要： | 采用高温固相反应法制备了Ce3 掺杂的BaBrCl材料.研究了样品的荧光光谱,经X射线辐照前后的吸收光谱及差吸收谱(DAS).首次在BaBrCl:Ce3 中发现光激励发光.发射峰及光激励发光峰均位于～390 nm;DAS为500～750 nm的宽带谱,与BaFX:Eu2 (X=Cl,Br)相比,该吸收带与He-Ne激光器(633 nm),或廉价、小巧、使用方便的半导体激光器的波长更为匹配.表明BaBrCl:Ce3 有望成为一类新型的X射线存储材料.
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| 关 键 词： | BaBrCl:Ce3+ 光存储 电子俘获 稀土 |
| 文章编号： | 1673-0291（2006）03-0034-03 |
| 收稿时间： | 2005-12-09 |
| 修稿时间： | 2005-12-09 |
Study of Optical Storage in Ce3+ Doped BaBrCl |
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| DONG Jin-feng,WANG Yong-sheng,MENG Xian-guo,WANG Li-hui.Study of Optical Storage in Ce3+ Doped BaBrCl[J].JOURNAL OF BEIJING JIAOTONG UNIVERSITY,2006,30(3):34-36,42. |
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| Authors: | DONG Jin-feng WANG Yong-sheng MENG Xian-guo WANG Li-hui |
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| Institution: | School of Science, Beijing Jiaotong University,Beijing 100044, China |
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| Abstract: | The material BaBrCl doped with Ce~(3+) was prepared by solid state reaction method.The photoluminescence of BaBrCl:Ce~(3+) was investigated.The optical absorption spectra and the corresponding difference absorption spectra(DAS) were studied.The photostimulated luminescence of the material was observed in this phosphor for the first time.Both photoluminescence spectrum and photostimulated luminescence spectrum show luminescence peak at 390 nm.The corresponding DAS show two bands in a region from 550 nm to 750 nm.Compared with BaFX:Eu~(2+)(X=Cl,Br),the absorption band of this sample matches the He-Ne laser(633 nm),or even the cheaper,more portable and more convenient semiconductor laser better.The results indicate that BaBrCl:Ce~(3+) has a potential to be a promising X-ray storage phosphor. |
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| Keywords: | BaBrCl:Ce~(3+) optical storage electron trapping rare earth |
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