添加元素对反应烧结碳化硅导电特性的影响

研究了Ni、Mo和Al元素对反应烧结碳化硅导电特性的影响．试样通过室温、高温电阻率的测定和显微组织分析，可知在室温与高温下，加入Ni、Mo和Al均可明显降低反应烧结碳化硅的电阻率，随着Ni、Mo和Al加入量的增加，碳化硅的室温电阻率也下降．其中，Ni、Mo对反应烧结碳化硅电阻率的影响比Al大．在烧结过程中，Ni、Mo分别与液态Si反应，并在碳化硅粒子界面处生成Ni

Effect of Additives on Resistivity of Reaction-Bonded Silicon Carbide

The effect of additives Ni, Mo and Al is studied for the electrical resistivity of reaction bonded silicon carbide (RB SiC). Electrical resistivity measurements measured at room and high temperature show that they decrease by adding Ni, Mo and Al. With increased contents of additives, the electrical resistivity of RB SiC will decrease. The effect of Ni and Mo on the resistivity is greater than that of Al. The additives Ni and Mo reacted with liquid Si such that Ni 2Si 3 and Mo 3Si 5 are formed at the grain boundaries of SiC, while Al is in the SiC solution with free Si.