| 一种三维多层1TxR阻变存储器设计 |
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| 引用本文： | 张佶,金钢,吴雨欣,陈怡,林殷茵.一种三维多层1TxR阻变存储器设计[J].复旦学报(自然科学版),2011(4):423-429. |
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| 作者姓名： | 张佶 金钢 吴雨欣 陈怡 林殷茵 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目(60206005,60373017,60676007) |
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| 摘 要： | 提出一种适用于未来高密度应用的三维多层可堆叠1TxR阻变存储器设计.采用新型的多个存储电阻共享一个选通管的存储单元,选通管制作在硅片表面与标准逻辑工艺兼容,存储电阻堆叠在不同的互连金属层之间,构成三维存储结构.在0.13μm工艺下,以一个使用8层金属堆叠的1TxR（x=64）结构为例,其存储密度比传统的单层1T1R结构...
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| 关 键 词： | 三维 可堆叠 多层 阻变存储器 高密度应用 |
A 3D Resistive Switch Memory with Stackable 1TxR Cell |
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| ZHANG Ji,JIN Gang,CHEN Yi,WU Yu-xin,LIN Yin-yin.A 3D Resistive Switch Memory with Stackable 1TxR Cell[J].Journal of Fudan University(Natural Science),2011(4):423-429. |
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| Authors: | ZHANG Ji JIN Gang CHEN Yi WU Yu-xin LIN Yin-yin |
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| Institution: | ZHANG Ji,JIN Gang,CHEN Yi,WU Yu-xin,LIN Yin-yin(State Key Laboratory of ASIC and System,Fudan University,Shanghai 200433,China) |
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| Abstract: | A novel 3D Resistive Switch Memory concept adopting stackable multi-layer 1TxR memory cell structure for future high density application is proposed.The access transistor fabricated on the top of silicon wafer is shared by several resistors.Resistors are stacked between different metallic layers to form 3D structure.For an 8-layer stacked metallic 1TxR(x=64) as an example,the density is over 280% higher than that of the conventional single layer 1T1R structure.Corresponding operation algorithm is proposed t... |
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| Keywords: | 3D stackable multi-layer RRAM high density application |
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