| 高质透明ZnO/ 金刚石异质结的制备 |
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| 引用本文： | 杨洁,田红志,王成新.高质透明ZnO/ 金刚石异质结的制备[J].吉林大学学报(理学版),2006,44(3):460-464. |
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| 作者姓名： | 杨洁 田红志 王成新 |
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| 作者单位： | 空军航空大学,基础部,长春,130022;吉林大学学报(信息科学版)编辑部,长春,130012;中山大学,物理科学与工程学院,广州,510275 |
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| 摘 要： | 介绍一种高质透明异质结的表征与制备方法. 该异质结首先在金刚石单晶表面制备出p型金刚石单晶薄膜, 然后在其上制备高取向ZnO薄膜, 构成n型区. 系统测试结果表明, 当p\|n结正向偏压达到2.5 V时, 电流密度为109 A/m2, 启动电压为0.72 V, 与期待值一致. 良好的整流特性以及在可见光范围内的透明特性在该元件中得以实现.
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| 关 键 词： | ZnO 金刚石 p-n结 组装 |
| 文章编号： | 1671-5489(2006)03-0460-05 |
| 收稿时间： | 2005-11-17 |
| 修稿时间： | 2005年11月17 |
Fabrication of High-quality Transparent ZnO/Diamond Heterojunction |
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| YANG Jie,TIAN Hong-zhi,WANG Cheng-xin.Fabrication of High-quality Transparent ZnO/Diamond Heterojunction[J].Journal of Jilin University: Sci Ed,2006,44(3):460-464. |
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| Authors: | YANG Jie TIAN Hong-zhi WANG Cheng-xin |
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| Institution: | 1. Department of Foundation, Aviation University of Airforce, Changchun 130022, China; 2. Editorial Department of Journal of Jilin University (Information Science Edition), Changchun 130012, China; 3. School of Physics and Engineering, Zhongshan University, Guangzhou 510275, China |
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| Abstract: | The fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal are described. The results indicate that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V that are in agreement with the expected values. Moreover, the excellent rectification characteristic and transparentness in the visible light range were applied in the device. |
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| Keywords: | ZnO |
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