| 气相法同质外延金刚石单晶薄膜的研究 |
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| 引用本文： | 张志明,李胜华.气相法同质外延金刚石单晶薄膜的研究[J].上海交通大学学报,1994,28(3):124-128. |
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| 作者姓名： | 张志明 李胜华 |
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| 基金项目： | 国家高技术和国家自然科学基金 |
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| 摘 要： | 本文以＜１００＞和＜１１１＞两种取向的金刚石为衬底，用微波ＰＣＶＤ法进行了同质外延实验，考察了衬底取向，反应气体，碳源浓度等因素对外延层形貌与结构的影响，给出了获得比较理想单晶外延层的实验条件。
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| 关 键 词： | 金刚石薄膜 同质外延 气相法 |
An Investigation of the Homoepitaxial Diamond Thin Film Growth by CVD Method |
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| Zhang Zhiming, Li Shenghua, Cai Qiyu,He Xianchang, Shen Hesheng.An Investigation of the Homoepitaxial Diamond Thin Film Growth by CVD Method[J].Journal of Shanghai Jiaotong University,1994,28(3):124-128. |
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| Authors: | Zhang Zhiming Li Shenghua Cai Qiyu He Xianchang Shen Hesheng |
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| Institution: | Zhang Zhiming; Li Shenghua; Cai Qiyu;He Xianchang; Shen Hesheng |
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| Abstract: | An investigation of the homoepitaxial growth on the<100> and < 111 > diamond substrates using microwave PCVD method has been carried out. The results show the influences of the substrate orientation, reaction gases, carbon concentration on morphology and structure of the epitaxial layers,and give the growth conditions for diamond homoepitaxial growth. |
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| Keywords: | diamond thin film homoepitaxy microwave PCVD |
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