| IMPLICIT—EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICE PROBLEM |
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| 作者姓名： | CHENWei |
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| 作者单位： | DepartmentofEconomics,ShandongUniversity,Jinan250100,AcademyofMathematicsandSystemsScience,ChineseAca |
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| 基金项目： | This research is supported by China Postdoctoral Science Foundation. |
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| 摘 要： | The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density.The electric potential equation is discretized by the finite element method.The electron and hole density equations are treated by implicit-explicit multistep finite element methods.The optimal L^2-norm error estimates are derived.
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| 关 键 词： | 半导体 有限元方法 泊松方程 非线性抛物方程 电位 电荷密度 |
IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICEPROBLEM |
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| CHENWei.IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICEPROBLEM[J].Journal of Systems Science and Complexity,2003,16(1):101-103. |
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| Authors: | CHEN Wei |
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| Abstract: | The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by the finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The optimal L -norm error estimates are derived. |
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| Keywords: | Semiconductor device strongly A(0)-stable multistep methods finite element methods |
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