| 铋掺杂氧化铟锌薄膜晶体管的研究 |
| |
| 引用本文： | 皮树斌,杨建文,韩炎兵,张群.铋掺杂氧化铟锌薄膜晶体管的研究[J].复旦学报(自然科学版),2017,56(3). |
| |
| 作者姓名： | 皮树斌 杨建文 韩炎兵 张群 |
| |
| 作者单位： | 复旦大学材料科学系TFT-LCD关键材料及技术国家工程实验室,上海,200433 |
| |
| 基金项目： | 国家自然科学基金，上海市科委科研计划 |
| |
| 摘 要： | 采用射频磁控溅射法制备了以非晶铋掺杂氧化铟锌(a-IZBO)为沟道层的薄膜晶体管(TFTs).相比本征的氧化铟锌薄膜晶体管,a-IZBO-TFTs显示出更低的关态电流,正向偏移的开启电压,表明铋掺杂能有效抑制载流子浓度.在铋掺杂含量为原子百分比8.6%时达到最佳的电学性能:载流子迁移率为7.5cm~2/(V·s),开关比为3×10~8,亚阈值摆幅为0.41V/decade.使用光致发光激发谱和X射线光电子能谱评价了a-IZBO沟道层中的氧空位缺陷,分析结果证实了铋的掺杂确实有效地减少了氧空位,从而抑制了半导体沟道层中的载流子浓度,对a-IZO-TFTs的总体电学性能改善起到较大的作用.
|
| 关 键 词： | 铋掺杂 氧化铟锌铋(IZBO) 薄膜晶体管(TFT) |
Investigation of Bismuth Doped Indium-Zinc-Oxide Thin Film Transistors |
| |
| PI Shubin,YANG Jianwen,HAN Yanbing,ZHANG Qun.Investigation of Bismuth Doped Indium-Zinc-Oxide Thin Film Transistors[J].Journal of Fudan University(Natural Science),2017,56(3). |
| |
| Authors: | PI Shubin YANG Jianwen HAN Yanbing ZHANG Qun |
| |
| Abstract: | Amorphous bismuth doped indium zinc oxide thin film transistors (a-IZBO-TFTs) were prepared by rf magnetron sputtering at room temperature.Compared with the intrinsic indium zinc oxide TFTs,a-IZBO-TFTs show lower off-current and positive turn-on voltage shift.The optimum a-IZBO-TFT performance in enhancement mode was obtained at Bi doping content of 8.6％,with the mobility of 7.5 cm2/(V · s),on/off current ratio of 3× 108,and subthreshold swing of 0.41 V/decade.PL spectra as well as XPS spectra were used to evaluate the oxygen vacancy defects in the a-IZBO channel layers.It is found that Bi doping is effective on suppressing the oxygen vacancies and thus the carrier concentration and improving the comprehensive electrical performance of IZO-TFT devices. |
| |
| Keywords: | bismuth doping indium-zinc-bismuth-oxide(IZBO) thin film transistors(TFT) |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
