硅各向异性腐蚀对偏压依赖和重掺杂停蚀机理的新模型

系统研究了硅各向异性腐蚀对偏压的依赖及重掺杂的影响,建立了液一半接触能带模型和界面电荷传递模型,提出了反应注入概念且指出腐蚀速度通常依赖于界面态的填充情况,合理解释了实验得到的蚀速-偏压关系.考虑到非平衡载流子复合后,得到与实验吻合的蚀速比-载流子浓度公式.

A NEW MODEL FOR THE MECHANISM OF SILICON BIAS-DEPENDENT ETCHING AND HEAUILY DOPED ETCH-STOP

In this paper, the dependence of anisotropic silicon etching on bias-voltage and the influence of heavy doping are studied in detail. Two models of liquid-semiconductor contact energy band and transport of interface changes are set up. The concept of reaction implantation is put forward. Meanwhile, it is considered that the etching rate usually depends on the filling conditions of the interface state. The relations of experimental etching rate and bias-voltage are explained correctly. Finally, after considering the recombination of disequilibrium carriers, the etching rate carrier concentration formula is found to be in good agreement with experimental data.