| 考虑非均匀掺杂衬底对一维MOST模型的修正 |
| |
| 引用本文： | 柯导明,陈军宁,代月花,宣长林,段运生.考虑非均匀掺杂衬底对一维MOST模型的修正[J].安徽大学学报(自然科学版),2000,24(1):26-34. |
| |
| 作者姓名： | 柯导明 陈军宁 代月花 宣长林 段运生 |
| |
| 作者单位： | 安徽大学,电子工程与信息科学系,安徽,合肥,230039 |
| |
| 摘 要： | 为了控制MOST的阈值电压和减小DIBL效应 ,必须对MOST的沟道进行离子注入。这种非均匀掺杂衬底MOST特性的最常用分析方法是数值模拟 ,但这种方法计算量大 ,不能得到解析模型 ,不适用于电路模拟设计。本文所提出的解析模型与SPICEMOS3模型形式相似 ,但其所有参数都是数值模拟的解析公式。新模型将数值分析与解析方法结合起来 ,具有精度高 ,概念清晰 ,计算量小等优点 ,适用于电路分析程序。
|
| 关 键 词： | 非均匀掺杂衬底 数值模拟 MOST阈值电压 MOST伏安特性 |
A Modification of One Dimension MOST Model for Non-uniformly Doped Substrate |
| |
| KE Dao-ming,CHEN Jun-ning,DAI Yue-hua,XUAN Chang-lin,DUAN Yun-shen.A Modification of One Dimension MOST Model for Non-uniformly Doped Substrate[J].Journal of Anhui University(Natural Sciences),2000,24(1):26-34. |
| |
| Authors: | KE Dao-ming CHEN Jun-ning DAI Yue-hua XUAN Chang-lin DUAN Yun-shen |
| |
| Abstract: | In order to control threshold voltage and decrease DIBL effect,MOSTs must carry oution implant along the channel.The analysis method of MOST for non-uniformly doped substrate mostly uses numerical simulation.But the method is large calculation and can’t get an analytical model and apply in electrical circuit simulation programs,too. The paper develops an alytical model is similar to MOST's model of SPICE,but all parameters have been computed by numerical simulation. This is a high precision model which there is a distinct concept and little calculation. The model is able to use in electrical circuit simulation programs. |
| |
| Keywords: | non-uniform doped substrate numerical simulation threshold voltage of MOSTs the current-voltage relationship of MOSTs |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
