一种低电压、低功耗CMOS基准电压源的设计

本文设计了一种低电压、低功耗、高电源抑制比CMOS基准电压源。该电路基于工作在亚阈值区的MOS管，利用PTAT电流源与微功耗运算放大器构成负反馈系统以提高电源电压抑制比。SPICE仿真显示，在1V的电源电压下，输出基准电压为609mV，温度系数为72ppm/℃，静态工作电流仅为1.23μA。在1-5V的电源电压变化范围内，电压灵敏度为130μV/V，低频电源电压抑制比为74dB。该电路为全CMOS电路，不需要用到寄生PNP三极管，具有良好的CMOS工艺兼容性。

The Design of CMOS Voltage Reference for Low Voltage and Low Power

A high PSRR CMOS voltage reference for low voltage and low power is presented. This circuit, based on MOS transistors in subthreshold region, is using negative feedback system constructed by PTAT current source and micro-power operation amplifier to improve PSRR. The SPICE simulation demonstrated that with a power supply voltage of 1.0V, this circuit exhibits an output voltage of 609mV with a temperature coefficient of 72ppm/℃, and the total power supply current is 1.26µA. With the supply voltage range from 1.0V to 5V, the supply-sensitivity is 130μV/V, and the PSRR is 74dB in low frequency. This circuit have good compatibility for CMOS technology due to full CMOS construction without parasitic bipolar PNP transistors.