| (AlxGa1-x)yIn1-yP表面氧化特性 |
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| 引用本文： | 连洁,张淑芝,许进,黄柏标,崔德良,秦晓燕.(AlxGa1-x)yIn1-yP表面氧化特性[J].山东大学学报(理学版),1999,34(2). |
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| 作者姓名： | 连洁 张淑芝 许进 黄柏标 崔德良 秦晓燕 |
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| 作者单位： | 1. 山东大学光电系
2. 山东大学晶体国家重点实验室 |
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| 摘 要： | 利用双层吸收膜模型，采用消光式椭圆偏振仪，对用ＭＯＣＶＤ方法生长的（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｍｇ）和（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｓｉ）３个样品及它们的表面氧化膜的光学参数进行了测量和计算，并对其结果加以讨论．另外还在室温下对（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）表面氧化膜的生长速率及其厚度进行研究，并得到膜厚与时间的线性关系曲线
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| 关 键 词： | 双层吸收膜模型 氧化膜光学参数 椭圆偏振仪 |
PROPERTIES OF OXIDATION ON THE (AlxGa1-x)yIn1-yP SURFACE |
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| Lian Jie,Zhang Shuzhi,Xu Jin,Huang Bobiao,Cui Deliang,Qin Xiaoyan.PROPERTIES OF OXIDATION ON THE (AlxGa1-x)yIn1-yP SURFACE[J].Journal of Shandong University,1999,34(2). |
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| Authors: | Lian Jie Zhang Shuzhi Xu Jin Huang Bobiao Cui Deliang Qin Xiaoyan |
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| Abstract: | The optical parameters for three samples of intrinsic,doped Si and doped Mg (Al x Ga 1- x ) yIn 1- y P prepared by the MOCVD on the GaAs substrate were measured by using the null-type ellipsometry and were calculated by the model of double layer absorption film.The results obtained were discussed.The grown rates and thickness of oxide film on the intrinsic (Al x Ga 1- x ) yIn 1- y P surface exposed in the ambient air were studied.A linear dependent of oxide film thickness on the time was obtained. |
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| Keywords: | two layer absorption film model the optical parameters of oxide film ellipsometer |
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